EXTRINSIC PHOTOCONDUCTIVITY IN SILICON
Semiannual technical summary rept. 15 Apr-30 Sep 1968
SYLVANIA ELECTRONIC SYSTEMS-WEST MOUNTAIN VIEW CA
Pagination or Media Count:
A maximum impurity optical absorption cross section was measured for Ga in Si. Based on this measurement and the thickness limitations of planar processing, estimated doping densities of 1 x 10 to the 18th powercu.cm. will be required for detector mosaics produced by planar techniques. The effects of these high doping densities on detector properties are discussed. Fabrication of Ga doped Si detectors in material doped to 2 x 10 to the 17th powercu.cm. is described. A simple and versatile time constant measurement based on detector noise spectral density is discussed.
- Solid State Physics