Accession Number:

AD0686486

Title:

EXTRINSIC PHOTOCONDUCTIVITY IN SILICON

Descriptive Note:

Semiannual technical summary rept. 15 Apr-30 Sep 1968

Corporate Author:

SYLVANIA ELECTRONIC SYSTEMS-WEST MOUNTAIN VIEW CA

Personal Author(s):

Report Date:

1968-09-30

Pagination or Media Count:

29.0

Abstract:

A maximum impurity optical absorption cross section was measured for Ga in Si. Based on this measurement and the thickness limitations of planar processing, estimated doping densities of 1 x 10 to the 18th powercu.cm. will be required for detector mosaics produced by planar techniques. The effects of these high doping densities on detector properties are discussed. Fabrication of Ga doped Si detectors in material doped to 2 x 10 to the 17th powercu.cm. is described. A simple and versatile time constant measurement based on detector noise spectral density is discussed.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE