Accession Number:

AD0686259

Title:

ON CROWDING EFFECTS AND FAILURE MECHANISMS IN HIGH POWER TRANSISTOR SWITCHES,

Descriptive Note:

Corporate Author:

DEFENCE RESEARCH TELECOMMUNICATIONS ESTABLISHMENT OTTAWA (ONTARIO) COMMUNICATIONS LAB

Personal Author(s):

Report Date:

1968-08-20

Pagination or Media Count:

2.0

Abstract:

The relationship between current crowding and device failure in the high speed saturating epitaxial transistor switch is discussed. Agreement between theory and practice is demonstrated, using a composite large area device comprising an array of small area transistors. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE