Accession Number:

AD0686256

Title:

EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON,

Descriptive Note:

Corporate Author:

BRITISH COLUMBIA UNIV VANCOUVER DEPT OF PHYSICS

Personal Author(s):

Report Date:

1967-04-13

Pagination or Media Count:

24.0

Abstract:

Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE