EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON,
BRITISH COLUMBIA UNIV VANCOUVER DEPT OF PHYSICS
Pagination or Media Count:
Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.
- Solid State Physics