Accession Number:

AD0686166

Title:

RADIATION HARDENED JUNCTION FIELD EFFECT TRANSISTORS,

Descriptive Note:

Corporate Author:

MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s):

• George,William

Report Date:

1968-12-01

Pagination or Media Count:

40.0

Abstract:

The fabrication and testing of radiation hardened junction field effect transistors is described. Several structures were evaluated, including p- and n-channel devices of fixed geometry and dopant concentration, n-channel devices with fixed dopant concentrations, but different mask geometries, and n-channel devices with several channel dopant concentrations. The report describes and presents experimental verification of a technique which allows achievement of relatively high breakdown voltages in heavily doped devices. Author

Descriptors:

• *FIELD EFFECT TRANSISTORS
• HARDENING
• MANUFACTURING
• DAMAGE
• RADIATION EFFECTS
• NUCLEAR RADIATION
• DOPING
• FAST NEUTRONS
• CHARGE CARRIERS
• MASKING

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE