INTERNAL QUANTUM EFFICIENCY OF GaAs1-xPx ELECTROLUMINESCENT DIODES.
Scientific Interim rept. no. 1, 1 Dec 67-30 Nov 68,
RCA LABS PRINCETON N J
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The objective of this contract has been to study and to optimize the internal quantum efficiency of GaAs1-xPx electroluminescent diodes, particularly those emitting visible radiation. This investigation has involved the effects of alloy composition, impurity types and concentrations, compositional grading, junction abruptness, and crystal growth conditions. Average junction efficiencies have been increased by an order of magnitude by optimizing the various parameters. As a result, planar diodes, emitting at 6800A, can be prepared with room-temperature external efficiencies of about 0.1. Author
- Electrical and Electronic Equipment
- Lasers and Masers