Accession Number:

AD0685272

Title:

INVESTIGATION OF GaAsxP1-x ALLOYS FOR HIGH SPEED CURRENT LIMITING DEVICES.

Descriptive Note:

Technical rept.,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1969-01-01

Pagination or Media Count:

35.0

Abstract:

The GaAsxP1-x single crystals used in the devices were grown by a vapor phase epitaxial technique. A brief description is presented and contact preparation is also described. The relative advantages and disadvantages of sandwich-like and planar-like structures are discussed, with emphasis on the differential resistance expected in the saturation range. The effects of temperature on diode characteristics are considered. Resistivity, mobility, Hall-coefficient, photoresistivity, and photo-Hall measurements are reported for crystals of alloy compositions near x 0.70. Conclusions resulting from the experiments and plans for further research are discussed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE