Accession Number:

AD0684907

Title:

CONCENTRATION PROFILES OF TWO-STEP DIFFUSIONS OF BORON INTO SILICON,

Descriptive Note:

Corporate Author:

HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s):

Report Date:

1969-01-01

Pagination or Media Count:

44.0

Abstract:

The concentration profiles of boron diffused into silicon were experimentally determined for two-step diffusions yielding surface concentrations near 10 to the 18th powercu cm. The average diffusion coefficient of boron in silicon at 1150C was found. A flat portion of the experimental curves indicating a constant boron concentration near the silicon surface is explained on the basis of a segregation phenomenon at the silicon oxide-silicon interface. Author

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE