Accession Number:

AD0684643

Title:

THREE-LEVEL LOGIC ELEMENTS ON FERRITE TRANSISTOR CELLS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1968-09-27

Pagination or Media Count:

11.0

Abstract:

A 3-level ferrite-transistor memory element was developed for storing, reading, and shaping a ternary code. This element was used as a basis for designing a ternary half-adder the element can perform all three ternary-algebra operations inversion, conjunction, and disjunction. Laboratory tests of the half-adder hookup proved that 1 Single-channel links for ternary information transmission enhances the adder reliability 2 All elements are loaded uniformly and with not more than two similar elements, which also enhances reliability 3 Only one cycle is used for receiving addends and forming the sum hence, no matching devices are needed for using the half-adder in an arithmetic unit 4 All elements can be designed as identical modules.

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE