THREE-LEVEL LOGIC ELEMENTS ON FERRITE TRANSISTOR CELLS,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
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A 3-level ferrite-transistor memory element was developed for storing, reading, and shaping a ternary code. This element was used as a basis for designing a ternary half-adder the element can perform all three ternary-algebra operations inversion, conjunction, and disjunction. Laboratory tests of the half-adder hookup proved that 1 Single-channel links for ternary information transmission enhances the adder reliability 2 All elements are loaded uniformly and with not more than two similar elements, which also enhances reliability 3 Only one cycle is used for receiving addends and forming the sum hence, no matching devices are needed for using the half-adder in an arithmetic unit 4 All elements can be designed as identical modules.
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