Accession Number:

AD0683967

Title:

SHIFT OF THE EDGE OF SELF-ABSORPTION IN AN ELECTRIC FIELD OF CdTe SINGLE CRYSTALS AND FILMS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1968-11-22

Pagination or Media Count:

9.0

Abstract:

To clarify certain discrepancies between the results of measuring the edge shift in the CdTe thin film absorption at room temperature in a constant electric field and those obtained theoretically, the edge shift in the CdTe thin film and single crystal absorption was studied in a variable electric field at the temperature of liquid nitrogen. Measurements were made on single crystals obtained from a gaseous phase and by the method of horizontal zonal fusion, and on thin films obtained by thermal deposition in vacuum on a glass substrate. The single crystals ranged in thickness from 2350 to 300 micrometers which made it possible to obtain different fields. The nature of the edge shift was found to be identical for all single crystals. The shift was determined at the maximum of spectral dependence of density variation on the applied field. In the case of thin films the earlier deviations from the theory are explained by the effect of intercrystalline fields.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE