METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.
Quarterly rept. 1 Oct-31 Dec 68,
NATIONAL BUREAU OF STANDARDS WASHINGTON D C INST FOR APPLIED TECHNOLOGY
Pagination or Media Count:
The report describes activities relating to measurement of resistivity, carrier lifetime, inhomogeneities, and Hall effect in semiconductor crystals study of infrared measurement methods, properties of deep-lying impurities in InSb, and high field effects establishment of a processing facility evaluation of aluminum metallization, wire bonds, and wafer die attachment review of NASA measurement methods and measurement of second breakdown in transistors, thermal properties of devices, and noise in microwave diodes. Projects on silicon nuclear radiation detectors and specification of germanium are also described. Author
- Electrical and Electronic Equipment
- Solid State Physics