Accession Number:

AD0683777

Title:

RADIATION STUDY ON MOS STRUCTURES.

Descriptive Note:

Final rept. 15 Dec 65-14 Dec 68,

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV

Report Date:

1969-01-01

Pagination or Media Count:

171.0

Abstract:

The effects of ionizing radiation on metal-oxide-silicon MOS field-effect devices have been studied. Two permanent surface effects -- space-charge build-up in the passivating oxide and an increase in the fast surface stage density -- are characterized in detail and a trapping model is presented. This report describes the results of a detailed study of the above two effects using low and high energy electrons, X-rays and ultraviolet light. Planar diodes, bipolar transistors, MOS transistors, and junction field-effect transistors have been exposed to ionizing radiation and the results interpreted in terms of the two surface effects. In addition, these device types were subjected to neutron irradiation and the relative importance of surface and bulk effects determined for each device. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE