RADIATION STUDY ON MOS STRUCTURES.
Final rept. 15 Dec 65-14 Dec 68,
FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV
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The effects of ionizing radiation on metal-oxide-silicon MOS field-effect devices have been studied. Two permanent surface effects -- space-charge build-up in the passivating oxide and an increase in the fast surface stage density -- are characterized in detail and a trapping model is presented. This report describes the results of a detailed study of the above two effects using low and high energy electrons, X-rays and ultraviolet light. Planar diodes, bipolar transistors, MOS transistors, and junction field-effect transistors have been exposed to ionizing radiation and the results interpreted in terms of the two surface effects. In addition, these device types were subjected to neutron irradiation and the relative importance of surface and bulk effects determined for each device. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products