Accession Number:

AD0683711

Title:

ELECTRIC FIELD PROFILE AND ELECTRON DRIFT VELOCITIES IN LITHIUM DRIFTED SILICON,

Descriptive Note:

Corporate Author:

STANFORD UNIV CALIF HIGH ENERGY PHYSICS LAB

Report Date:

1968-12-01

Pagination or Media Count:

32.0

Abstract:

The electric field profile and the drift velocity of electrons in lithium drifted silicon in the direction at room temperature have been measured. By injecting short bursts of 10 keV electrons into reverse biased diodes, current pulses were produced and viewed on a sampling oscilloscope. To improve the accuracy of the measurement, a picosecond signal averaging system was employed. Electric field profiles in thin SiLi showed an overcompensation of the p material near the n contact due to the lithium diffusion process. Drift velocity measurements as a function of electric field over the range from 2.0 to 48 kVcm were obtained. At 48 kVcm, the drift velocity of 8.6 x 10 to the 6th power cmsec is not yet a saturation value. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE