INFLUENCE OF DYNAMIC STRAIN ON SILICON JUNCTIONS.
Interim rept. no. 1, 1 Jan 67-1 Jan 69,
RESEARCH TRIANGLE INST DURHAM N C
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The effect of large strains on the electrical properties of p-n junctions was studied by electromagnetically driving with a sinusoidal force a cantilevered silicon beam into which the junctions are diffused. Stress levels greater than 10 to the 9th power dynessq cm was obtained at the natural resonant frequency of the beam typically 200 Hz. An asymmetry was observed in the junction current which shows clearly a difference in response to compressive and tensile forces. With increasing compressive forces the usual increase in junction current was observed. In tension, however, an increasing force first resulted in a decreasing current then an increasing current. No first order influences of time dependent lifetime effects or reversible defect creation in the junctions were observable. These observations are correlated with a theoretical model for the piezojunction effect based on stress induced changes in the energy band structure of the material. Author
- Solid State Physics