RESEARCH IN EXPERIMENTAL AND THEORETICAL PHYSICS.
Final rept. 1 Jun 65-31 Dec 68,
CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
Pagination or Media Count:
The research involved the study of field-effect devices. The two primary areas were 1 analysis involving the important silicon metal-oxide-semiconductor field-effect transistors MOSFET and 2 consideration of novel field-effect devices. Since MOSFETs frequently are used with degenerate carrier concentrations in the channel, Fermi-Dirac statistics, rather than Maxwell-Boltzmann statistics, are appropriate in the analysis. Author
- Electrical and Electronic Equipment
- Solid State Physics