Accession Number:

AD0683612

Title:

RESEARCH IN EXPERIMENTAL AND THEORETICAL PHYSICS.

Descriptive Note:

Final rept. 1 Jun 65-31 Dec 68,

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

Report Date:

1969-02-01

Pagination or Media Count:

15.0

Abstract:

The research involved the study of field-effect devices. The two primary areas were 1 analysis involving the important silicon metal-oxide-semiconductor field-effect transistors MOSFET and 2 consideration of novel field-effect devices. Since MOSFETs frequently are used with degenerate carrier concentrations in the channel, Fermi-Dirac statistics, rather than Maxwell-Boltzmann statistics, are appropriate in the analysis. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE