INVESTIGATION OF COINCIDENT RADIO-FREQUENCY DRIVE FOR NDRO IN THIN-FILM MEMORIES.
MASSACHUSETTS INST OF TECH CAMBRIDGE ELECTRONIC SYSTEMS LAB
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An investigation of the feasibility of applying radio-frequency drive techniques to a nondestructive readout NDRO thin magnetic film memory is described. The method was demonstrated as being very successful in obtaining coincident-frequency NDRO. Drive currents of 20 MHz and 40 MHz were used during readout, when it was observed that values for these currents as low as 30 mA peak-to-peak with 20-mil wide drive lines still gave discernible output signals. Coincident radio-frequency writing was found to be possible only under critical phase and bias conditions, being limited by domain boundary creep and noncoherent magnetization rotation. Author
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