Accession Number:

AD0683368

Title:

A VANADIUM OXIDE FILM 'SWITCHING' ELEMENT.

Descriptive Note:

Technical rept.,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y

Personal Author(s):

Report Date:

1969-02-01

Pagination or Media Count:

30.0

Abstract:

Vanadium dioxide films were sputtered onto alumina substrates by a radio-frequency method. The films were heat-treated at 600C to insure good crystallinity. At 68C, the resistivity changed sharply at this so-called metal-semiconductor transition temperature. The resistance of the films can also be switched under an applied voltage through essentially a thermal process. For an applied voltage of 200 volts, for instance, the estimated transition time is of the order of a fraction of a microsecond. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE