METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.
NATIONAL BUREAU OF STANDARDS WASHINGTON D C
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The report describes NBS activities relating to measurement of resistivity, carrier lifetime, inhomogeneities, and Hall effect in semiconductor crystals study of infrared measurement methods, properties of deep-lying impurities in InSb, and high field effects establishment of a processing facility evaluation of wire bonds review of NASA measurement methods and measurement of second breakdown in transistors, thermal properties of devices, and noise in microwave diodes. Projects on silicon nuclear radiation detectors and specification of germanium are also described. Supplementary data concerning staff, committee activities, technical and information services, and publications are included as appendixes. A list of ASTM Standards relevant to integrated circuit processing is also included. Author
- Electrical and Electronic Equipment
- Solid State Physics