Accession Number:

AD0681256

Title:

THE EFFECT OF X-RAY AND ELECTRON RADIATION ON GaAs p-n JUNCTIONS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1968-05-03

Pagination or Media Count:

7.0

Abstract:

A study was made of the effect of x-ray and electron emission on the volt-ampere characteristics of gallium arsenide p-n junctions with the initial concentration of the current carriers of 4 x 10 to the 15th powercc and a mobility of 3500 sq cmV sec. The irradiation of the p-n junctions was accomplished using x-rays and electrons with energies of 90 KeV and 6.5 MeV respectively. On the basis of the results obtained, the following was established 1 forward and reverse currents in p-n junctions are increased owing to the appearance of nonequilibrium current carriers during x-ray irradiation. Because of imperfections in gallium arsenide crystals, the rate of the recombination of current carriers was sufficiently high, and the observed changes of characteristics during irradiation were much smaller than changes during the irradiation of germanium and silicon diodes. The rectification factor of p-n junctions during irradiation varies by as much as 40 of the initial value 2 the reverse current of p-n junction irradiated by electrons increase sharply in the prebreakdown voltage regions, and the breakdown voltage is decreased. This reverse branch of the characteristic can be explained by the development of radiation defects in the region of the p-n junction. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE