Accession Number:

AD0681173

Title:

SEMICONDUCTOR HETEROJUNCTION STRUCTURE STUDIES.

Descriptive Note:

Final rept. 15 Dec 67-14 Sep 68,

Corporate Author:

CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1968-09-15

Pagination or Media Count:

57.0

Abstract:

Single crystal ZnSe has been grown on Ge substrates by a close-spaced HCL transport process. Feasibility studies have been made of such semiconductor heterojunction structures and confirm that wide-gap emitter action is practical. Transistors of n-type ZnSe emitters on pGe-nGe base-collector structures have usuable current gains even though the emitter doping levels 10 to the 13th power donorscu cm are many orders of magnitude lower than the base doping levels 10 to the 19th power acceptorscu cm. Effects on the current gain of parameters such as doping levels, base widths, current injection levels and temperature have been studied. Because of the low emitter doping levels, the emitter current flow is space-charge limited. Further study of this heterojunction pair is needed to determine its optical quantum efficiency, performance as a phototransistor and performance as a high frequency transistor. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE