PIEZO-ABSORPTION IN GERMANIUM.
Final scientific rept.,
CITY COLL NEW YORK DEPT OF PHYSICS
Pagination or Media Count:
The measurements of the piezo-absorption in the absorption edge region for germanium and silicon was concluded. A theoretical calculation of the matrix elements for these indirect transitions at the center of the Brillouin Zone in silicon was published in the Physical Review. The feasibility of using infrared absorption in the free carrier region of germanium to determine the relative electron population in the various valleys in n-germanium under uniaxial stress was demonstrated. The equipment for measuring the warm electron coefficient in germanium for arsenic doped n-Ge was assembled. Author
- Solid State Physics