INTEGRATED LOGIC NETWORKS.
Final rept. 1 Mar 67-30 Sep 68,
RCA LABS PRINCETON N J
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This report describes research into the properties and uses of thin films of silicon-on-sapphire with emphasis on the development of high-speed complementary-symmetry MOS integrated circuits. The nucleation rate during the growth of the films was found to greatly affect the film properties. A comparison of diodes fabricated in silicon-on-sapphire and diodes fabricated in silicon-on-spinel magnesium-aluminate is made, indicating that some advantages may be realized by the use of spinel substrates. The results of the investigation into the shape of the edge of silicon etched in various etchants are presented. The use of the scanning electron microscope SEM has yielded invaluable information into the details of the shape of the edge which cannot be discerned with optical microscropy. Techniques are described which allowed the successful fabrication of a pattern containing 62,500 crossovers. The fabrication of high-speed nondestructive readout memory cells, exhibiting a readwrite cycle time of 5 nsec, and the fabrication of a 5-stage ring oscillator are described. The latter operates at a frequency of 32 MHz at 4.5 V, which indicates a pair-delay of approximately 1 nsec. Author
- Electrical and Electronic Equipment