VAPOR-SOLVENT GROWTH OF SEMICONDUCTING CRYSTALS.
Final rept. 1 Dec 62-31 May 66,
IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
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The report describes the accomplishments of the research effort that was aimed at improving the fundamental understanding of the mechanisms of crystal growth from the vapor phase by way of one or several chemical transport reactions. The results of studies of equilibrium, vapor-transport and surface characteristics in the systems Ge-1, Ge-Br, Ge-Ga-I, Si-H-Cl, GeGaAs and SiSi are described. Lists of publications, oral presentations and patent disclosures originated by the contract-supported work are given. Author
- Solid State Physics