Accession Number:
AD0680001
Title:
MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,
Descriptive Note:
Corporate Author:
INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB
Personal Author(s):
Report Date:
1968-08-01
Pagination or Media Count:
20.0
Abstract:
A method is shown whereby differential capacitance measurements can be used to establish the impurity atom distribution in a semiconductor. Unlike previously published information on this topic, the method presented here is applicable to the measurement of semiconductor material containing a significant electrostatic charge. Illustrations are given of the differential capacitance inferred impurity profiles in the vicinity of abrupt and linearly-graded high-low junctions. Author
Descriptors:
Subject Categories:
- Solid State Physics