Accession Number:

AD0680001

Title:

MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB

Personal Author(s):

Report Date:

1968-08-01

Pagination or Media Count:

20.0

Abstract:

A method is shown whereby differential capacitance measurements can be used to establish the impurity atom distribution in a semiconductor. Unlike previously published information on this topic, the method presented here is applicable to the measurement of semiconductor material containing a significant electrostatic charge. Illustrations are given of the differential capacitance inferred impurity profiles in the vicinity of abrupt and linearly-graded high-low junctions. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE