INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.
BELL AND HOWELL RESEARCH LABS PASADENA CALIF
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The indium arsenide-phosphide alloy system has been studied. The compound InP was prepared by directional freezing, and from Hall effect measurements the segregation coefficients for S, Se, Te, Sn and Zn were derived, as well as the variation of electron mobility with carrier concentration over the range from 2 x 10 to the 16th power to 3 x 10 to the 19th powercc. Ingots of the alloys have been grown by the Czochralski and liquid encapsulation B2O3 techniques these were polycrystalline but with large grains. Lattice parameters were obtained by X-ray powder photography, and a phase diagram constructed. Carrier concentrations and mobilities were obtained from Hall effect measurements. The preparation of laser diodes was studied by investigating diffusion, contact problems and Fabry-Perot cavity fabrication. Stimulated light emission was observed, with thresholds as low as 2000 Asq cm at 77K and lasing up to 150K. A wavelength of 1.060 microns was achieved from lasing diodes by adjusting the alloy composition, fine tuning being accomplished by a small temperature adjustment. Author
- Lasers and Masers
- Solid State Physics