Accession Number:

AD0679634

Title:

INVESTIGATION OF RADIATION EFFECTS IN SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Report Date:

1968-09-01

Pagination or Media Count:

19.0

Abstract:

The program consists of two tasks and involves the investigation of fast-neutron radiation effects in semiconductor devices. Objectives of Task I are to determine bulk, epitaxial, and diffused-layer neutron-damage constants in silicon and to correlate them with device parameters. This report describes the pre-irradiation measurement of substrate impurity concentrations using MOS-CV and four-point probe structures fabricated on the same silicon chip. Task II objectives are the correlations of neutron degradation of h sub FE with physical device constants and damage mechanisms. The pre-irradiation characteristics of the bipolar transistor, the tetrode and the transistor with a field-plate over the emitter-base junction are presented and discussed. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE