Accession Number:

AD0679512

Title:

EFFECTIVE CROSS SECTIONS OF THE FORMATION OF DEFECTS IN GaAs UNDER THE EFFECT OF GAMMA-RAYS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1968-04-18

Pagination or Media Count:

12.0

Abstract:

The work calculates the theoretical values of the effective cross sections of defect formation for Ga and As in GaAs under the effect of gamma-rays. Certain experimental results are introduced for the effective cross sections in p-GaAs for the fine level 0.05 eV from the top of the valence band. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE