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Accession Number:
AD0679512
Title:
EFFECTIVE CROSS SECTIONS OF THE FORMATION OF DEFECTS IN GaAs UNDER THE EFFECT OF GAMMA-RAYS,
Descriptive Note:
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Report Date:
1968-04-18
Pagination or Media Count:
12.0
Abstract:
The work calculates the theoretical values of the effective cross sections of defect formation for Ga and As in GaAs under the effect of gamma-rays. Certain experimental results are introduced for the effective cross sections in p-GaAs for the fine level 0.05 eV from the top of the valence band. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE