Accession Number:
AD0679512
Title:
EFFECTIVE CROSS SECTIONS OF THE FORMATION OF DEFECTS IN GaAs UNDER THE EFFECT OF GAMMA-RAYS,
Descriptive Note:
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s):
Report Date:
1968-04-18
Pagination or Media Count:
12.0
Abstract:
The work calculates the theoretical values of the effective cross sections of defect formation for Ga and As in GaAs under the effect of gamma-rays. Certain experimental results are introduced for the effective cross sections in p-GaAs for the fine level 0.05 eV from the top of the valence band. Author
Descriptors:
Subject Categories:
- Solid State Physics