Accession Number:

AD0679512

Title:

EFFECTIVE CROSS SECTIONS OF THE FORMATION OF DEFECTS IN GaAs UNDER THE EFFECT OF GAMMA-RAYS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Krivov,M. A.
• Malyanov,S. V.

Report Date:

1968-04-18

Pagination or Media Count:

12.0

Abstract:

The work calculates the theoretical values of the effective cross sections of defect formation for Ga and As in GaAs under the effect of gamma-rays. Certain experimental results are introduced for the effective cross sections in p-GaAs for the fine level 0.05 eV from the top of the valence band. Author

Descriptors:

• *GALLIUM ARSENIDES
• *DAMAGE
• *CRYSTAL DEFECTS
• *COMPTON SCATTERING
• GAMMA RAY CROSS SECTIONS
• BAND THEORY OF SOLIDS
• CHARGE CARRIERS
• USSR
• USSR

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE