Accession Number:
AD0679359
Title:
PLASMA EFFECTS IN SEMICONDUCTORS,
Descriptive Note:
Corporate Author:
BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH PLASMA PHYSICS LAB
Personal Author(s):
Report Date:
1968-10-01
Pagination or Media Count:
44.0
Abstract:
The review begins with a survey of nonequilibrium plasma production methods and the properties of such plasmas in their as-produced state. The methods are injection, impact ionization, and two-photon absorption. The description of the as-produced properties includes previously unpublished information about plasma distribution during injection and characteristic times involved in plasma decay. Two plasma effects, beyond those associated with plasma production, are discussed in detail, namely the pinch effect and microwave radiation. The status of the theories and experiments describing pinch formation and its properties thereafter are critically examined so that the open questions emerge. No theory for microwave radiation exists. The plethora of observations are grouped into four sets of characteristics the threshold conditions, the spectrum of the radiation, its polar dependence, and the attendant low frequency MHz resistance oscillations. Recent experiments show that a magnetic field is not essential for emission, and some simple, reasonable arguments about the role of a magnetic field in producing radiation, if true, reconcile the conflicting reports concerning the four sets of characteristics. Author
Descriptors:
Subject Categories:
- Solid State Physics