Accession Number:

AD0678880

Title:

GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Descriptive Note:

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s):

Report Date:

1968-08-01

Pagination or Media Count:

52.0

Abstract:

Epitaxial vapor deposition of beta-silicon carbide on 111 beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE