Accession Number:

AD0678302

Title:

INVESTIGATION OF P-JUNCTIONS PRODUCED ON THE BASIS OF SILICON CARBIDE ALLOYED WITH BERYLLIUM,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1967-12-19

Pagination or Media Count:

8.0

Abstract:

Electroluminescent p-n-junctions based on p-SiCBe, prepared by various methods, are described. Volt-ampere, volt-capacitive, and spectral characteristics of the p-n-junctions are presented. Satisfactory rectifying properties were obtained from grown p-n-junctions in the plane perpendicular to axis c. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE