Accession Number:

AD0678162

Title:

INVESTIGATION OF SEMICONDUCTOR SCHOTTKY BARRIERS FOR OPTICAL DETECTION AND CATHODIC EMISSION,

Descriptive Note:

Corporate Author:

HEWLETT-PACKARD CO PALO ALTO CALIF

Report Date:

1968-09-01

Pagination or Media Count:

51.0

Abstract:

The photoemissive yield of holes from Au into p-type Si obeys the Fowler relationship from threshold h nu o 0.28 eV up to about 0.46 eV where the yield is 0.8 at 77K for an unmatched diode with a Au pad 0.016 in. in diameter. At higher photon energies, the yields are less than the Fowler values. The yield is 4.3 at 1.0 eV. The yield is smaller for larger diameter Au pads. The photoemissive yield per unit area is 10- to 20-fold greater at the edge than in the central region of Au contacts to n-type Si, as determined by scanning with a 0.001 in. light spot. Varying the rate and duration of Au evaporation or heat treating n-type diodes up to 400C have only minor influences on yield. Surface processing of p-type Ge has been developed for fabricating Au contacts. The thickness of the residual film on the etch-polished surface is about 13A. An efficiency of .000062 was measured for cathodic emission from a cesiated Ag-ZnSe diode. Because of large excess currents, this value may be several orders of magnitude less than can be realized. A practical Ag-ZnS vehicle has been developed. The voltage-current characteristics of Ag contacts to ZnSe and ZnS degrade during the heat treatment required for vacuum bake-out. A similar degradation probably occurs for Ni contacts, but not for Pt contacts. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE