GALVANOMAGNETIC AND THERMOMAGNETIC PROPERTIES OF GALLIUM ARSENIDE AFTER DIFFUSION OF COPPER (GALVANOMAGNITNYE I TERMOMAGNITNYE SVOISTVA ARSENIDA GALLIYA POSLE DIFFUZII MEDI),
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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A method is elaborated for multiple diffusion of copper into gallium arsenide. It is shown that the concentrations of impurity ions and neutral atoms can be determined from the temperature dependence of Hall mobility. P-GaAs is investigated after one to three diffusions of copper with a whole concentration at 300 degrees K of 7.4 x 10 to the 14th power to 7.0 x 10 to the 15th powercc. An acceptor level is detected at a depth of 0.14 plus or minus 0.01 ev. The carrier scattering mechanisms are analyzed on the basis of the temperature curves of mobility and the transverse Nernst-Ettingshausen effect.
- Solid State Physics