THE VELOCITY OF DISLOCATIONS IN SILICON CRYSTALS,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The chemical etching method was used to reveal the dislocations produced by indentation on silicon single crystal specimens. Edge or 60 degree dislocation velocities are measured under different shear stresses and at different temperatures 700-900 degrees C. By assuming that the motion is thermally activated the corresponding activation energy is found to be about 2.94 eV. The velocities of edge dislocations and screw dislocations at 900 degrees C are compared, the latter being smaller. Measurements of dislocation velocities on different specimens show the retarding effect of as-grown dislocations. Dislocation multiplication is observed from as-grown dislocations from grain boundaries. Dislocation velocities in process of multiplication are measured. Certain factors affecting the measured values of dislocation velocities are discussed.
- Solid State Physics