Accession Number:

AD0673685

Title:

PHONON DRAG IN INDIUM AND GALLIUM ANTIMONIDES (FONONNOE UVLECHENIE V ANTIMONIDAKH INDIYA I GALLIYA),

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1967-05-03

Pagination or Media Count:

14.0

Abstract:

Measurements of the transverse and longitudinal Nernst-Ettinghausen N.-E. effect were carried out for p-InSb and p-GaSb with different impurity contents at 20-300K, in magnetic fields of or 26,000 oe. In all GaSb samples the N.-E. effect has a negative sign and the N.-E. field increases rapidly as the temp. is lowered. It is suggested that below 50K, the Rutherford mechanism of scattering of current carriers prevails. At 100K, in sufficiently pure InSb and GaSb samples the phonon-drag effect predominates in thermomagnetic and thermoelectric effects. It is also suggested that in both GaSb and InSb the charge transfer is accomplished by 2 types of holes heavy and light ones. The effect of phonon drag is connected with the heavy holes. The valence zones of both InSb and GaSb are doubly degenerate at k 0. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE