Accession Number:

AD0673367

Title:

MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB

Personal Author(s):

Report Date:

1968-04-01

Pagination or Media Count:

161.0

Abstract:

The report outlines the results of four mathematical investigations initiated during the present contract period the high-low semiconductor junction, the junction field-effect transistor, the measurement of impurity atom distributions by differential capacitance techniques, and the electrical properties of a diffused semiconductor resistor. Two of these investigations remain incomplete therefore, the information presented here constitutes a status report for these projects. The remaining two projects have been completed, and the information presented here summarizes all final conclusions derived from these mathematical investigations. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE