INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.
Technical summary rept. no. 1,
BELL AND HOWELL RESEARCH LABS PASADENA CALIF
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Studies are being made of the alloy system indium arsenide-phosphide InAs-InP to produce injection lasers which emit at 1.06 microns at room temperature. Ingots of InAs-InP were grown using both the Czochralski magnetic puller and a modified Czochralski technique in which the crystal is pulled from a melt encapsulated in boron oxide glass. Both methods show promising results, and crystals of InAs-InP were produced which have made possible the postulation of a revised phase diagram for the system. Both lattice parameters and electron carrier concentration and mobility data were obtained for the materials produced. Author
- Lasers and Masers
- Solid State Physics