Accession Number:

AD0673318

Title:

INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.

Descriptive Note:

Technical summary rept. no. 1,

Corporate Author:

BELL AND HOWELL RESEARCH LABS PASADENA CALIF

Report Date:

1968-03-01

Pagination or Media Count:

56.0

Abstract:

Studies are being made of the alloy system indium arsenide-phosphide InAs-InP to produce injection lasers which emit at 1.06 microns at room temperature. Ingots of InAs-InP were grown using both the Czochralski magnetic puller and a modified Czochralski technique in which the crystal is pulled from a melt encapsulated in boron oxide glass. Both methods show promising results, and crystals of InAs-InP were produced which have made possible the postulation of a revised phase diagram for the system. Both lattice parameters and electron carrier concentration and mobility data were obtained for the materials produced. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE