HIGH-INFORMATION-DENSITY STORAGE SURFACES.
Quarterly rept. no. 12, 1 Jan-31 Mar 68,
STANFORD RESEARCH INST MENLO PARK CALIF
Pagination or Media Count:
Progress is described on a program devoted to the preparation and investigation of two novel kinds of electron-beam-addressable storage elements of submicron size and densely packed arrays of these elements, and to the construction of a large-capacity, high-speed, electron-beam-addressable, data-storage system utilizing regular arrays of these elements. Further work on polymethyl methacrylate, and electron-sensitive material that exhibits both positive- and negative-resist behavior, is discussed leading to a basic procedure for utilizing this material to advantage in storage mosaic formation. A new technique for exposing positive resists in regular patterns of high packing density over large areas is described. This technique is based on the use of a fine-mesh screen as a corresponding array of local electron lenses. Recent developments of aluminum-oxide etching with vaporized lead fluoride PbF2 are covered, including the use of RF for ameliorating the unwanted etching of molybdenum resist perimeters surrounding the alumina film areas. First results of storage and readout on regular arrays of micro-cap elements are presented. Further development of a computer program for the design of electron-optical systems capable of scanning 100,000,000 elements per field for storage mosaic address is discussed. Author
- Electrical and Electronic Equipment
- Computer Hardware
- Computer Systems