Accession Number:

AD0672711

Title:

DISTRIBUTION OF IMPURITIES IN CRYSTALS AS A FUNCTION OF CONDITIONS OF THEIR GROWTH (RASPREDELENIE PRIMESEI V KRISTALLAKH V ZAVISIMOSTI OT USLOVII IKH ROSTA),

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1967-12-07

Pagination or Media Count:

13.0

Abstract:

Studies aimed at determining the degree of inhomogeneity in the distribution of a doping impurity with a distribution coefficient in excess of unity were carried out on Ge single crystals doped with Si and grown in three ways stationary method by slow cooling, pulling by Czochralskis method, and pulling from a melt supplied with a solid ingot. In specimens grown by the stationary method of slow cooling at a cooling rate of 1.5 deghr, the ingots were found to be inhomogeneous along the length and cross section. A homogeneous ingot structure was obtained by using the method of supplying the melt. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE