Accession Number:

AD0672698

Title:

HEAT OF FORMATION OF SILICON CARBIDE AND PRODUCTS OF ITS EVAPORATION (TEPLOTA OBRAZOVANIYA KARBIDA KREMINYA I PRODUKTOV EGO ISPARENIYA)

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Report Date:

1967-10-13

Pagination or Media Count:

11.0

Abstract:

The study was undertaken in order to determine the heats of formation of SiC and products of its vaporization from vapor pressure data. Langmuirs method was used to determine the total vapor pressure over SiC and partial pressures of Si, Si2C and SiC2 at temperatures of 2113, 2193 and 2273K.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE