Accession Number:

AD0672555

Title:

ACCOMMODATION OF LATTICE MISMATCH AT HETEROJUNCTIONS.

Descriptive Note:

Technical rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF METALLURGY AND MATERIALS SCIENCE

Personal Author(s):

• Mroczkowski,R. S.
• Witt,A. F.
• Gatos,H. C.

Report Date:

1968-07-01

Pagination or Media Count:

18.0

Abstract:

The accommodation of lattice mismatch at heterojunctions grown by back-melting and subsequent regrowth was investigated employing the InSb-GaSb system. Single crystals of either GaSb or InSb served as the one component substrate of the heterojunctions and the regrown part was an alloy of the general formula GaxIn1-xSb. The lattice mismatch at the heterojunction was varied by varying the composition of the regrown alloy. It was found that the accommodation of the lattice mismatch takes place by the generation of dislocations the number of which is consistent with a simple linear lattice model. Author

Descriptors:

• (*SEMICONDUCTING FILMS
• CRYSTAL DEFECTS)
• GALLIUM ALLOYS
• INDIUM ALLOYS
• ANTIMONY ALLOYS
• DISLOCATIONS
• DENSITY
• PURIFICATION
• MELTING
• PHOTOMICROGRAPHY

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE