RESEARCH ON DEFECT CONTROLLED ELECTRICAL PROPERTIES OF RUTILE.
Final technical documentary rept. 25 Nov 65-25 Nov 67,
MARQUETTE UNIV MILWAUKEE WIS
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The electrical conductivity of single crystals of rutile TiO2 was measured in the c and a directions over a temperature range 1000 degrees -1500 degrees C and from 1 to 10 the the -15th power atm of oxygen. The non-stoichiometric defect structure was rationalized on the basis of quasi-free electrons, both triply and quadruply ionized titanium interstitials, and acceptor impurities. A model based on the electrode blocking of titanium interstitials is proposed to explain the electrical transients observed below 1000 degrees C. An electron mobility of about 0.1 cm sqvolt-sec has been calculated by combining thermogravimetric and conductivity data above 1100 degrees C. A calculation of the cohesive energy of TiO2 using the Born-Mayer model indicates that the bonding in rutile is predominantly ionic. Author
- Solid State Physics