Accession Number:

AD0672264

Title:

RADIATION STUDY ON MOS STRUCTURES,

Descriptive Note:

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV

Personal Author(s):

• Snow,E. H.
• Albus,H-P.
• Cagnina,S. F.
• Molozzi,A. R.
• Fitzgerald,D. J.

Report Date:

1968-07-01

Pagination or Media Count:

34.0

Abstract:

The effects of neutron irradiations on junction field-effect transistors have been studied both experimentally and theoretically. A computer program has been written to calculate JFET characteristics including the effects of carrier removal. It has demonstrated that calculated and experimental characteristics agree well both before irradiation, and after doses of up to 10 to the 15th power nvt. Devices have been fabricated with 10 to the 17th powercc channel doping which show less than 15 change in I sub DSS or g sub m after 10 to the 15th power nvt thus demonstrating the feasibility of a JFET resistant to the permanent effects of nuclear as well as ionizing radiation. Drift tests on Li doped MOS capacitors and gate-controlled diodes have revealed gross instabilities with complicated time and voltage dependences. It is believed that the migration of Li ions in the surface depletion region as well as in the oxide is involved. Author

Descriptors:

• *DAMAGE
• SEMICONDUCTOR DIODES
• FIELD EFFECT TRANSISTORS
• CHARGE CARRIERS
• NEUTRON REACTIONS
• FAST NEUTRONS
• MANUFACTURING
• DOPING
• SILICON
• LITHIUM
• INTERFACES
• STABILITY
• STABILITY

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE