INVESTIGATION OF THE GROWTH OF SINGLE CRYSTAL SIC BY THE TRAVELLING SOLVENT AND OTHER METHODS.
Final rept. 1 Jan 67-31 Dec 67,
TYCO LABS INC WALTHAM MASS
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The travelling heater method was used for the growth of alpha-and beta-SiC crystals in graphite crucibles. Molten chromium was used as a solvent material for the solution zone which was kept between 1650 and 1900 degrees C. Solid polycrystalline SiC ingots 0.3 cm in diameter and 2 cm in length have been obtained, with the individual crystals having a grain size of up to 1 mm. Polycrystalline ingots of alpha-and beta-SiC crystals have also been obtained by slow cooling of a molten alloy solution of Cr and SiC mixtures in graphite crucibles. SiC crystal growth from a beryllium containing solvent matrix was attempted by the travelling solvent method. Author
- Inorganic Chemistry
- Fabrication Metallurgy