DEVELOPMENT OF PHOTORESISTIVE ELEMENTS FOR AN ANALOG MULTIPLIER.
Final rept. 1 Feb-31 Jul 67,
SIGMATRON INC GOLETA CALIF
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Cadmium sulfide layer photoresistive cells having improved properties and improved cell-to-cell uniformity have been developed for use in an analog multiplier. Each program objective -- a temperature coefficient below 0.1 percent per C deg., a voltage effect coefficient below 0.02 percent per volt, and a response time of less than 10 msec. -- has been realized in an individual photocell but all of these characteristics have not been embodied in a single photocell. The fabrication techniques employed on this program, including vacuum deposition, heat treatment, electroding and encapsulation are described. Measurement techniques for evaluating temperature effect, voltage effect, response time, and long-term stability are presented. Author
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