A BIBLIOGRAPHY ON METHODS FOR THE MEASUREMENT OF INHOMOGENEITIES IN SEMICONDUCTORS.
Final rept. Dec 66-Dec 67,
NATIONAL BUREAU OF STANDARDS WASHINGTON D C
Pagination or Media Count:
About 130 papers which deal with the measurement techniques useful in detecting the type and location of various inhomogeneities, primarily in germanium and silicon, are listed with key words. The types of inhomogeneities considered are those in impurity concentration, resistivity, mobility, diffusion length, lifetime, surface conditions, crystal perfection, and p-n junctions. Some of the 22 effects or methods used to detect these inhomogeneities are photovoltaic, electron voltaic, photoconductivity, one-, two- and four-point probe, spreading resistance, and voltage breakdown. There are three indexes a reference tabulation according to key words, a reference tabulation according to methods or effects used to detect an inhomogeneity, and an author index. Author
- Solid State Physics