Accession Number:

AD0669936

Title:

THE FRENKEL EFFECT IN SEMICONDUCTOR DIODES.

Descriptive Note:

APL Library bulletin translation series,

Corporate Author:

JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB

Personal Author(s):

Report Date:

1968-03-15

Pagination or Media Count:

11.0

Abstract:

One of the possible alternate ways is chosen to explain the voltage-dependence of reverse current observed experimentally under certain conditions in germanium and silicon diodes. The explanation is based on the assumption that in the volume charge regions of a p-n junction the probability of generating electrons and holes by recombination centers is increased with reverse voltage because thermal ionization is facilitated by the electric field. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE