THE FRENKEL EFFECT IN SEMICONDUCTOR DIODES.
APL Library bulletin translation series,
JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB
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One of the possible alternate ways is chosen to explain the voltage-dependence of reverse current observed experimentally under certain conditions in germanium and silicon diodes. The explanation is based on the assumption that in the volume charge regions of a p-n junction the probability of generating electrons and holes by recombination centers is increased with reverse voltage because thermal ionization is facilitated by the electric field. Author
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