Accession Number:

AD0669852

Title:

ANALYSIS OF RADIATION-INDUCED COUPLING EFFECTS BETWEEN INTEGRATED CIRCUIT ELEMENTS.

Descriptive Note:

Final rept. 12 May 67-28 Feb 68,

Corporate Author:

IBM FEDERAL SYSTEMS DIV OWEGO N Y ELECTRONICS SYSTEMS CENTER

Report Date:

1968-02-28

Pagination or Media Count:

80.0

Abstract:

The report describes the investigation of the dielectric isolation of an integrated circuit while under electron irradiation by studying the two primary effects of induced transient conductivity and charge storage in silicon dioxide layers. A mathematical approximation describing physical processes, outlined in a qualitative physical model, was developed which consists of a set of partial differential equations. A combined set of differential and difference equations have been constructed and solutions for these equations were found by using SCEPTREs differential equation solution capability. This computer program calculates transient conductivity, field distributions and the charges in the dielectric before and after irradiation. The average internal electric field in the silicon dioxide layer of SOS-structures was measured by means of optical probing with a Helium-Neon laser utilizing the electro-optical Kerr effect. For an unirradiated structure the average field in the oxide at zero bias was determined as 4 x 40,000 Vcm. In an identical SOS-structure electron bombarded with a total dose of 5.5 x 4,000 rads an average field of 1.2 x 120,000 Vcm was measured corresponding to 2.6 x 10 to the 12th power charges per sq cm in the dielectric. It could be concluded that the field in the dielectric at zero bias is directed toward the polysilicon layer. Positive charges stored in the dielectric are located in the vicinity of the interface silicon dioxide single crystal silicon. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE