Accession Number:

AD0668930

Title:

THE ELECTRICAL AND METALLURGICAL PROPERTIES OF DEFECTS IN COMPOUND SEMICONDUCTORS.

Descriptive Note:

Technical summary rept. 1 Sep 63-31 Jan 68,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

25.0

Abstract:

The report summarizes a program directed toward the following seven separate projects related to the electrical and metallurgical properties of defects in compound semiconductors 1 Diffusion, solubility, and distribution coefficient of zinc in gallium arsenide and gallium phosphide 2 Analytical study of zinc diffusion in gallium arsenide and the electrical properties of the resulting diffused layers 3 Electron microprobe study of lattice point defects in semiconductor single crystals 4 A point contact method for determining the charge carrier density and mobility in thin semiconducting layers 5 Some effects of gamma radiation on silicon and silicon devices 6 Green electroluminescence at P-N junctions in gallium phosphide 7 Fundamental studies on the properties of the GaxAl1-xAs system.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE