Accession Number:

AD0668903

Title:

EFFECT OF COLLECTOR DESIGN ON HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

15.0

Abstract:

Hot-spot formation was studied as a function of collector resistivity and thickness variations for a similar group of epitaxial and triple-diffused silicon planar transistors. An infrared radiometer was used for locating and measuring hot-spot temperatures. Hot-spot thermal resistance is used in the analysis of both forward and reverse bias second breakdown performance. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE