EFFECT OF COLLECTOR DESIGN ON HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Hot-spot formation was studied as a function of collector resistivity and thickness variations for a similar group of epitaxial and triple-diffused silicon planar transistors. An infrared radiometer was used for locating and measuring hot-spot temperatures. Hot-spot thermal resistance is used in the analysis of both forward and reverse bias second breakdown performance. Author
- Electrical and Electronic Equipment