Accession Number:

AD0668902

Title:

RELATIONSHIP BETWEEN HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1968-02-01

Pagination or Media Count:

19.0

Abstract:

By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE