RELATIONSHIP BETWEEN HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. Author
- Electrical and Electronic Equipment