SCHOTTKY EMISSION IN THIN-FILM DIODES
Technical rept. Jun 1966-Aug 1967
NAVAL CIVIL ENGINEERING LAB PORT HUENEME CA
Pagination or Media Count:
Temperature-dependent current-voltage I-V characteristics was observed in a new type of thin-film diode, consisting of Al, Al2O3, Mn, MnxOy, and Pb. Plots of In I-V to the 12 power, d In IdV to the 12 power - 1T, and InIsq T - 1T where T is temperature in K can be fitted by straight lines which show that Schottky emission is the dominant current-flow mechanism over the temperature range of 190K to about 350K. Barrier thicknesses were determined by high-frequency capacitance measurements and found to lie between 100A and 250A. Relative work functions, between the aluminum and lead films, were found to lie between 0.25 and 0.50 ev. One of the diodes was tested at 60 Hertz for 124 hours without causing a significant change in the shape of the I- V characteristic. It is concluded that nominal refinement of the fabrication technique will lead to a varistor thin-film diode which is inexpensive and which has long-term stability.
- Electrical and Electronic Equipment
- Electricity and Magnetism